Lateral lubistor structure and method

Details Lateral lubistor structure and method Lateral lubistor structure and method

2007-02-06

2007-02-06

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S401000, C257S449000, C257S536000

Reexamination Certificate

active

10908961

ABSTRACT:
An ESD LUBISTOR structure based on FINFET technology employs a vertical fin (a thin vertical member containing the source, drain and body of the device) in alternatives with and without a gate. The gate may be connected to the external electrode being protected to make a self-activating device or may be connected to a reference voltage. The device may be used in digital or analog circuits.

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