Semiconductor device incorporating a semiconductor...

Details Semiconductor device incorporating a semiconductor... Semiconductor device incorporating a semiconductor...

2007-10-09

2007-10-09

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S686000, C257S738000, C257S774000, C257SE21585

Reexamination Certificate

active

11093570

ABSTRACT:
A semiconductor device includes metal foil to which a ground potential is applied, at a semiconductor constructing body provided on the metal foil and having a semiconductor substrate and a plurality of external connection electrodes provided on the semiconductor substrate. An insulating layer is provided around the semiconductor constructing body and has a thickness substantially equal to the semiconductor constructing body. An one upper interconnecting layer is provided on the semiconductor constructing body and insulating layer, and electrically connected to the external connection electrodes. A vertical conducting portion extends through the insulating layer and electrically connects the metal foil and upper interconnecting layer.

REFERENCES:
patent: 6486005 (2002-11-01), Kim
patent: 2001/0010627 (2001-08-01), Akagawa
patent: 2004/0245614 (2004-12-01), Jobetto
patent: 2005/0140007 (2005-06-01), Jobetto
patent: 2005/0140021 (2005-06-01), Wakisaka et al.
patent: 2005/0161799 (2005-07-01), Jobetto
patent: 2001-168128 (2001-06-01), None
patent: 2004-71998 (2004-03-01), None

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