Semiconductor device having trench structures and method

Details Semiconductor device having trench structures and method Semiconductor device having trench structures and method

2007-08-14

2007-08-14

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S666000, C438S508000

Reexamination Certificate

active

11132949

ABSTRACT:
In one embodiment, a pair of sidewall passivated trench contacts is formed in a substrate to provide electrical contact to a sub-surface feature. A doped region is diffused between the pair of sidewall passivated trenches to provide low resistance contacts.

REFERENCES:
patent: 4927775 (1990-05-01), Alvarez et al.
patent: 6955972 (2005-10-01), Lee et al.
“Silicon Processing for the VLSI Era, vol. 2: Process Integration,” Stanley Wolf, Lattice Press, Copyright 1990, p. 542.

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