Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S189090

Reexamination Certificate

active

11488053

ABSTRACT:
A semiconductor memory device including: a memory cell array with electrically rewritable and non-volatile memory cells arranged therein; a sense amplifier circuit configured to read data of the memory cell array; first data hold circuits configured to hold data for designating whether each column of the memory cell array is defective or not; and a second data hold circuit configured to hold data read out of the first data hold circuits, and to control skipping a defective column address of the memory cell array in accordance with the data read out of the first data hold circuit.

REFERENCES:
patent: 5347484 (1994-09-01), Kwong et al.
patent: 6337815 (2002-01-01), Cho
patent: 6459630 (2002-10-01), Nakayama et al.
patent: 6552937 (2003-04-01), Ladner et al.
patent: 6788597 (2004-09-01), Ladner et al.
patent: 6813184 (2004-11-01), Lee
patent: 6816420 (2004-11-01), Liu et al.
patent: 2006/0044918 (2006-03-01), Kang et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3838732

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.