Solid-state image sensing device and method for...

Details Solid-state image sensing device and method for... Solid-state image sensing device and method for...

2007-11-27

2007-11-27

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257SE27133

Reexamination Certificate

active

11155643

ABSTRACT:
In the solid-state image sensing device, a first N type semiconductor region and an N well of a PMOS region are formed in the same process, thereby making the first N type semiconductor region and the N well in the PMOS region substantially equal in N type impurity concentration-depth profile. By forming the first N type semiconductor region and the N well in the same process, the number of manufacturing process for the solid-state image sensing device can be decreased. It is, therefore, possible to suppress excessive application of heat history to the solid-state image sensing device during ion implantation and diffusion of N type impurity. Accordingly, by suppressing excessive diffusion of impurity and the like resulting from the excessive application of the heat history to the solid-state image sensing device, yield of the solid-state image sensing device can be improved.

REFERENCES:
patent: 6150676 (2000-11-01), Sasaki
patent: 6852565 (2005-02-01), Zhao
patent: 2002/0054227 (2002-05-01), Hashimoto
patent: 2005/0012167 (2005-01-01), Sawase et al.
patent: 11-289075 (1999-10-01), None

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