Semiconductor storage device and manufacturing method for...

Details Semiconductor storage device and manufacturing method for... Semiconductor storage device and manufacturing method for...

2007-12-25

2007-12-25

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S751000, C257SE27086, C257SE27104

Reexamination Certificate

active

11134414

ABSTRACT:
There is provided a semiconductor storage device comprising a ferroelectric capacitor superior in barrier capability against penetration of hydrogen from all directions including a transverse direction. The device comprises a transistor formed on a semiconductor substrate, the ferroelectric capacitor formed above the transistor and including a lower electrode, a ferroelectric film, and an upper electrode, a first hydrogen barrier film which continuously surrounds side portions of a ferroelectric capacitor cell array constituted of a plurality of ferroelectric capacitors, and a second hydrogen barrier film which is formed above the ferroelectric capacitor cell array and which is brought into contact with the first hydrogen barrier film in the whole periphery.

REFERENCES:
patent: 6930340 (2005-08-01), Hasegawa et al.
patent: 2002/0096771 (2002-07-01), Yamada et al.
patent: 2002/0127867 (2002-09-01), Lee
patent: 2005/0242383 (2005-11-01), Mikawa
patent: 2006/0002170 (2006-01-01), Kumura et al.
patent: 2001-237393 (2001-08-01), None
Y. Nagano, et al. “0.18 μm SBT-Based Embedded FeRAM Operating at a Low Voltage of 1.1V”, 2003 Symposium on VLSI Technology Digest of Technical Papers, 2 pages.

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