Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-06-05
2007-06-05
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S308000, C438S149000, C438S151000
Reexamination Certificate
active
11195654
ABSTRACT:
In a method of obtaining a crystalline silicon film having high crystallinity at a low temperature and for a short time by using a catalytic element and using both a heat treatment and irradiation of laser light, a catalytic element which does not require a gettering step is used as the catalytic element for facilitating crystallization, so that a semiconductor device having high characteristics and high productivity is obtained. Specifically, a coating film of an element in group 14, such as germanium, which is the same group of the periodic table as silicon is formed on an amorphous silicon film formed on a glass substrate, a heat treatment at 550° C. for 4 hours is carried out, and further, irradiation of laser light is carried out, so that a crystalline silicon film is obtained. In the above structure, the element in group 14, which does not have a bad influence on TFT characteristics even if the element is left in the silicon film, is used, so that the semiconductor device having high characteristics and high productivity can be obtained.
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Ohtani Hisashi
Yamazaki Shunpei
Lee Hsien-Ming
Robinson Eric J.
Robinson Intellectual Property Law Office
Semiconductor Energy Laboratory Co,. Ltd.
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