Method for producing a field effect transistor

Details Method for producing a field effect transistor Method for producing a field effect transistor

2007-11-20

2007-11-20

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S587000, C438S745000, C257SE21412

Reexamination Certificate

active

10943242

ABSTRACT:
A field effect transistor is produced on a substrate. A semiconductor material is deposited on a portion of a single crystal temporary material. At least part of the temporary material is removed. A portion of a conducting material is then formed above and beneath the portion of semiconductor material. A layer of an electrically insulating material is located between the portion of temporary material and the substrate.

REFERENCES:
patent: 5583362 (1996-12-01), Maegawa
patent: 5753557 (1998-05-01), Tseng
patent: 5811324 (1998-09-01), Yang
patent: 5965914 (1999-10-01), Miyamoto
patent: 6495403 (2002-12-01), Skotnicki et al.
patent: 6605847 (2003-08-01), Kim et al.
patent: 7112832 (2006-09-01), Orlowski et al.
patent: 7176041 (2007-02-01), Lee et al.
patent: 2003/0042547 (2003-03-01), Deleonibus
patent: 2004/0209463 (2004-10-01), Kim et al.
patent: 2005/0048771 (2005-03-01), Gao et al.
patent: 1 091 417 (2001-04-01), None
Preliminary French Search Report, FR 0310984, May 17, 2004.

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