Photoresist, photolithography method using the same, and...

Details Photoresist, photolithography method using the same, and... Photoresist, photolithography method using the same, and...

2007-12-04

2007-12-04

Chu, John S. (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S192000, C430S193000, C430S317000, C430S320000

Reexamination Certificate

active

11439983

ABSTRACT:
There is provided a positive photoresist for near-field exposure excellent in light utilization efficiency even with small layer thickness of the photoresist layer for image formation, and allowing for reduced pattern edge roughness, and a photolithography method including a step of exposing by the near-field exposure the photoresist layer for image formation made thereof. In a positive photoresist containing an alkali-soluble novolak resin and a quinone diazide compound, the film thickness of the photoresist at the time of exposure is not larger than 100 nm, and the absorption coefficient of the photoresist α (μm−1) for the exposure light is such that 0.5≦α≦7.

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