Method for forming dual damascene interconnection in...

Details Method for forming dual damascene interconnection in... Method for forming dual damascene interconnection in...

2007-02-06

2007-02-06

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S624000, C438S637000

Reexamination Certificate

active

11024842

ABSTRACT:
A method for forming a dual damascene interconnection in a semiconductor device. An etch stop film and an intermetal insulating film are formed sequentially on a lower metal film. A via hole is formed to expose a portion of a surface of the etch stop film through the intermetal insulating film. A sacrificial film is formed to fill the via hole. Portions of the intermetal insulating film and the sacrificial film are removed to form a trench. The sacrificial film is removed to expose the portion of the surface of the etch stop film. A plasma etching process is performed at a predetermined temperature using an etching gas to remove the exposed portion of the etch stop film and to prevent or suppress generation of a polymer. A diffusion barrier film is formed within the trench and the via hole such that the diffusion barrier contacts the lower metal film. An upper metal film is formed on the diffusion barrier.

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