Method of programming a resistive memory device

Details Method of programming a resistive memory device Method of programming a resistive memory device

2007-10-30

2007-10-30

Pham, Lý Duy (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S158000, C365S163000, C365S171000, C365S173000, C365S185190

Reexamination Certificate

active

11166572

ABSTRACT:
In an embodiment of a method of programming a resistive memory device, an electrical potential is applied to the gate of a transistor operatively associated with the resistive memory device, and successive, increasing electrical potentials are applied across the resistive memory device. In another embodiment of a method of programming a resistive memory device, an electrical potential is applied across the resistive memory device; and successive, increasing electrical potentials are applied to the gate of a transistor operatively associated with the resistive memory device.

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