Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-13
2007-11-13
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C257S388000, C257S301000, C257S302000, C438S585000, C438S261000
Reexamination Certificate
active
11088947
ABSTRACT:
A semiconductor memory device includes a semiconductor substrate, an isolation insulation film filled in a plurality of trenches formed in the semiconductor substrate to define a plurality of element formation regions, a floating gate provided on each of the element formation regions through a first gate insulation film, a control gate provided on the floating gate through a second gate insulation film, and source/drain regions provided in the semiconductor substrate, wherein a mutual diffusion layer is provided at least at an interface between the second gate insulation film and the control gate.
REFERENCES:
patent: 5631179 (1997-05-01), Sung et al.
patent: 5650648 (1997-07-01), Kapoor
patent: 6020238 (2000-02-01), He et al.
patent: 6144054 (2000-11-01), Agahi et al.
patent: 6734484 (2004-05-01), Wu
patent: 6800911 (2004-10-01), Miura
patent: 2003/0157769 (2003-08-01), Weimer
patent: 2005/0002231 (2005-01-01), Ozawa et al.
patent: 2005/0003619 (2005-01-01), Tanaka et al.
patent: 2005/0212036 (2005-09-01), Tanaka et al.
patent: 2001-210734 (2001-08-01), None
patent: 2001-217329 (2001-08-01), None
patent: 2001-223282 (2001-08-01), None
U.S. Appl. No. 11/344,074, filed Feb. 1, 2006, Tanaka et al.
Inumiya Seiji
Ishida Hirokazu
Natori Katsuaki
Ozawa Yoshio
Tanaka Masayuki
Chiu Tsz K.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Wilczewski Mary
LandOfFree
Semiconductor memory device and method of manufacturing the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device and method of manufacturing the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and method of manufacturing the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3832240