Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-11-27
2007-11-27
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S386000, C438S648000, C438S653000, C438S656000, C438S680000, C438S681000, C257SE21170, C257SE21585
Reexamination Certificate
active
10918308
ABSTRACT:
A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more homoleptic and/or heteroleptic precursor compounds that include, for example, guanidinate, phosphoguanidinate, isoureate, thioisoureate, and/or selenoisoureate ligands using a vapor deposition process is provided.
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Lebentritt Michael
Lee Kyoung
Micro)n Technology, Inc.
Mueting Raasch & Gebhardt, P.A.
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