Nonvolatile memory cells with buried channel transistors

Details Nonvolatile memory cells with buried channel transistors Nonvolatile memory cells with buried channel transistors

2007-11-13

2007-11-13

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S607000, C257S296000, C257SE21081, C257SE21103, C257SE21689

Reexamination Certificate

active

11174084

ABSTRACT:
In a nonvolatile memory cell (110), the select gate transistor is formed as a buried channel transistor to increase the transistor current.

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