Memory array programming circuit and a method for using the...

Electrical computers and digital processing systems: memory – Address formation – Address mapping

Reexamination Certificate

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C711S103000

Reexamination Certificate

active

10653388

ABSTRACT:
A multi-level cell (MLC) memory array may be programmed using a programming circuit having a binary input register to store data to be input into the MLC array and a register to store a programming vector, where each element in the programming vector corresponds to a charge storage region of an MLC in the array. A controller may map pairs of bits from the input register to elements in the programming vector such that mapping a pair of bits to an element of the programming vector may set the vector element to a “program” value if the pair of bits corresponds to at least one specific program state associated with the programming vector.

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