Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-14
2007-08-14
Hoang, Quoc (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S257000, C257S315000, C257SE21179, C257S316000, C257SE21422, C257SE21600
Reexamination Certificate
active
11053952
ABSTRACT:
A semiconductor memory has plural cell transistors that are arranged in a matrix. The cell transistor comprises a silicon substrate, a control gate, a pair of electrically isolated floating gates. Plural projections are formed in the P type silicon substrate, and a pair of N type diffusion regions as the source and the drain is formed in both sides of the projection. The control gate faces the projection via a fourth insulation layer. The side surface of the floating gates faces the side surfaces of the projection via a first insulation layer, and faces the control gate via a third insulation layer. The floating gate faces the diffusion region via the first insulation layer.
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Birch & Stewart Kolasch & Birch, LLP
Hoang Quoc
Innotech Corporation
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