Semiconductor device

Details Semiconductor device Semiconductor device

2007-02-20

2007-02-20

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S274000

Reexamination Certificate

active

10834098

ABSTRACT:
A terminating resistance element of an LSI chip has an N−type impurity diffusion region formed at the surface of a P type well at the surface of a semiconductor substrate, an N+type impurity diffusion layer formed at the surface of the N−type impurity diffusion region, and a pair of electrodes formed at respective ends at the surface of the N+type impurity diffusion layer. The N−type impurity diffusion region has an impurity concentration lower than the impurity concentration of the N+type impurity diffusion layer. Therefore, the capacitance of the PN junction becomes smaller as compared to the conventional case where the N type impurity diffusion layer is provided directly at the surface of a P type semiconductor substrate. Therefore, reflection and attenuation of an input signal are suppressed.

REFERENCES:
patent: 5479115 (1995-12-01), Ueda et al.
patent: 6566204 (2003-05-01), Wang et al.
patent: 11-3895 (1999-01-01), None

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