Memory cell having p-type pass device

Details Memory cell having p-type pass device Memory cell having p-type pass device

2007-06-12

2007-06-12

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S156000, C365S204000, C257S903000

Reexamination Certificate

active

11225912

ABSTRACT:
For one disclosed embodiment, an apparatus comprises a first p-type device coupled between a cell voltage node and a storage node, an n-type device coupled between the storage node and a reference voltage node, and a second p-type device to couple the storage node to a bit line in response to a signal on a select line. At least one side of diffusion regions in a substrate to form both the first p-type device and the second p-type device are substantially aligned. Other embodiments are also disclosed.

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