Semiconductor device and method for manufacturing same

Details Semiconductor device and method for manufacturing same Semiconductor device and method for manufacturing same

2007-12-11

2007-12-11

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257SE29148

Reexamination Certificate

active

11123178

ABSTRACT:
A semiconductor device comprises a drift region of a first conduction type, a base region of a second conduction type, a source region of the first conduction type, a contact hole, a column region of the second conduction type, a plug and wiring. The drift region formed on a semiconductor substrate of the first conduction type. The base region of a second is formed in a prescribed region of the surface of the drift region. The source region is formed in a prescribed region of the surface of the base region. The contact hole extends from the source region surface side to the base region. The column region is formed in the drift region below the contact hole. The plug comprises a first conductive material and fills the contact hole. The wiring comprises a second conductive material and is electrically connected to the plug.

REFERENCES:
patent: 4705759 (1987-11-01), Lidow et al.
patent: 4967243 (1990-10-01), Baliga et al.
patent: 6870220 (2005-03-01), Kocon et al.
patent: 2003/0201483 (2003-10-01), Sumida
patent: 2001-298189 (2001-10-01), None
Timothy Henson, et al., “Low Voltage Super Junction MOSFET Simulation and Experimentation”, ISPSD-03 (2003), pp. 37-40.

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