Semiconductor device and fabrication method with etch stop...

Details Semiconductor device and fabrication method with etch stop... Semiconductor device and fabrication method with etch stop...

2007-02-13

2007-02-13

Ha, Nathan W. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257S347000

Reexamination Certificate

active

10982839

ABSTRACT:
A semiconductor device includes a semiconductor layer formed on part of an insulating layer. The semiconductor layer includes a diffusion region and a channel region. The insulating layer is etched so that the semiconductor layer is separated from the insulating layer below at least part of the diffusion region. The space left below this part of the semiconductor layer is filled by an etch stop film that also covers the side surfaces of the insulating layer. The etch stop film prevents contact holes targeted at the diffusion region from penetrating the insulating layer due to alignment error or defects in the semiconductor layer. Since the etch stop film is not present below the channel region, the electrical characteristics of the semiconductor device are not altered.

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patent: 2000-133709 (2000-05-01), None

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