Method for forming plasma enhanced deposited, fully oxidized...

Details Method for forming plasma enhanced deposited, fully oxidized... Method for forming plasma enhanced deposited, fully oxidized...

2007-05-29

2007-05-29

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S788000, C257SE21275

Reexamination Certificate

active

10953573

ABSTRACT:
A method of forming a plasma enhanced deposited oxide film on a substrate includes introducing into a chamber containing the substrate silane gas and a dopant gas such as phosphine. The chamber is pressurized and energy is applied to create a plasma. The energy may be a dual frequency energy. The gas rates and pressure are selected to produce a plasma enhanced deposited oxide film on a substrate having a Si—O—Si bond peak absorbance in the IR spectrum of at least 1092 cm−1.

REFERENCES:
patent: 6042901 (2000-03-01), Denison et al.
patent: 6303518 (2001-10-01), Tian et al.
patent: 7080528 (2006-07-01), M'Saad et al.
Lowrie, T.: “Development of a fully oxidized PECVD PSG film,”Semiconductor International, pp. 105-111 (Aug. 2000).

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