Transistor-free random access memory

Details Transistor-free random access memory Transistor-free random access memory

2007-06-26

2007-06-26

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S185010, C365S185140

Reexamination Certificate

active

10464938

ABSTRACT:
A memory core includes a bit line and a word line. The memory core also includes a core cell in electrical communication with the word line and the bit line. The core cell includes a threshold changing material. The threshold changing material is programmed to enable access to the core cell based upon a voltage applied to the word line. Methods for accessing a memory core cell also are described.

REFERENCES:
patent: 3530441 (1970-09-01), Ovshinsky
patent: 6189582 (2001-02-01), Reinberg et al.
patent: 6426891 (2002-07-01), Katori
patent: 6449190 (2002-09-01), Bill
patent: 6490203 (2002-12-01), Tang
patent: 6545898 (2003-04-01), Scheuerlein
patent: 6735114 (2004-05-01), Hamilton et al.
patent: 6784517 (2004-08-01), Kleveland et al.
patent: 2003/0081451 (2003-05-01), Lowrey et al.

Affiliated with

Also associated with

Rating

Transistor-free random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transistor-free random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor-free random access memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3822497