Method for forming a bond pad interface

Details Method for forming a bond pad interface Method for forming a bond pad interface

2007-01-30

2007-01-30

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE23020

Reexamination Certificate

active

10910036

ABSTRACT:
A composite bond pad that is resistant to external forces that may be applied during probing or packaging operations is presented. The composite bond pad includes a non-self-passivating conductive bond pad (134) that is formed over a semiconductor substrate (100). A dielectric layer (136) is then formed over the conductive bond pad (134). Portions of the dielectric layer (136) are removed such that the dielectric layer (136) becomes perforated and a portion of the conductive bond pad (134) is exposed. Remaining portions of the dielectric layer (136) form support structures (138) that overlie that bond pad. A self-passivating conductive capping layer (204) is then formed overlying the bond pad structure, where the perforations in the dielectric layer (136) allow for electrical contact between the capping layer (204) and the exposed portions of the underlying bond pad (134). The support structures (138) provide a mechanical barrier that protects the interface between the capping layer (204) and the bond pad (134). Additional mechanical robustness is achieved when the support structures (138) remain coupled to the unremoved portion of the dielectric layer (136), as forces buffered by the support structures (138) are distributed across the dielectric layer (136) and not concentrated at the bond pad location.

REFERENCES:
patent: 4723197 (1988-02-01), Takiar et al.
patent: 5149674 (1992-09-01), Freeman, Jr. et al.
patent: 5284797 (1994-02-01), Heim
patent: 5700735 (1997-12-01), Shiue et al.
patent: 5719448 (1998-02-01), Ichikawa
patent: 5736791 (1998-04-01), Fujiki et al.
patent: 5804883 (1998-09-01), Kim et al.
patent: 5847466 (1998-12-01), Ito et al.
patent: 5912510 (1999-06-01), Hwang et al.
patent: 5923088 (1999-07-01), Shiue et al.
patent: 5942448 (1999-08-01), White
patent: 5989991 (1999-11-01), Lien
patent: 6156660 (2000-12-01), Liu et al.
patent: 6187680 (2001-02-01), Costrini et al.
patent: 6191023 (2001-02-01), Chen
patent: 6197613 (2001-03-01), Kung et al.
patent: 6207547 (2001-03-01), Chittipeddi et al.
patent: 6544884 (2003-04-01), Ohta et al.
patent: 6703286 (2004-03-01), Yu et al.
patent: 11-186434 (1999-07-01), None
Semiconductor International, “Solving Low-k-Integration Challenges,” www.semiconductor.net, Nov. 1999, pp. 56-57.
English Translation of Notification of First Office Action from the Patent Office of the People's Republic of China fro SC10861TP CHIN, Chinese Application No. 00130967.6, Date of Notification Dec. 12, 2003.

Affiliated with

Also associated with

Rating

Method for forming a bond pad interface does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a bond pad interface, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a bond pad interface will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3820573