Semiconductor device

Details Semiconductor device Semiconductor device

2007-05-15

2007-05-15

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S314000, C257S324000, C257SE21679

Reexamination Certificate

active

10876560

ABSTRACT:
A semiconductor storage device showing a good memory characteristic, and a manufacturing method thereof, includes a semiconductor layer, a stacked body including a first insulating layer, a charge trapping layer, and a second insulating layer that are provided above the semiconductor layer, a gate electrode provided above the stacked body, a side wall insulating layer provided at the side of the gate electrode, and impurity regions and provided in the semiconductor layer. The end surface of the stacked body is positioned outside the end surface of the gate electrode.

REFERENCES:
patent: 5838041 (1998-11-01), Sakagami et al.
patent: 2003/0227047 (2003-12-01), Hsu et al.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3819524