Small grain size, conformal aluminum interconnects and...

Details Small grain size, conformal aluminum interconnects and... Small grain size, conformal aluminum interconnects and...

2007-05-15

2007-05-15

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21290

Reexamination Certificate

active

11230773

ABSTRACT:
A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.

REFERENCES:
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
patent: 4999160 (1991-03-01), Lowrey et al.
patent: 5108951 (1992-04-01), Chen et al.
patent: 5148259 (1992-09-01), Kato et al.
patent: 5192589 (1993-03-01), Sandhu
patent: 5246881 (1993-09-01), Sandhu et al.
patent: 5288665 (1994-02-01), Nulman
patent: 5316972 (1994-05-01), Mikoshiba et al.
patent: 5328873 (1994-07-01), Mikoshiba et al.
patent: 5383970 (1995-01-01), Asaba et al.
patent: 5384284 (1995-01-01), Doan et al.
patent: 5420072 (1995-05-01), Fiordalice et al.
patent: 5464666 (1995-11-01), Fine et al.
patent: 5480684 (1996-01-01), Sandhu
patent: 5523626 (1996-06-01), Hayashi et al.
patent: 5552181 (1996-09-01), Kondoh et al.
patent: 5654235 (1997-08-01), Matsumoto et al.
patent: 5700718 (1997-12-01), McTeer
patent: 5726100 (1998-03-01), Givens
patent: 5834846 (1998-11-01), Shinriki et al.
patent: 5843843 (1998-12-01), Lee et al.
patent: 5844318 (1998-12-01), Sandhu et al.
patent: 5847463 (1998-12-01), Trivedi et al.
patent: 5861344 (1999-01-01), Roberts et al.
patent: 5866205 (1999-02-01), Vaartstra et al.
patent: 5874131 (1999-02-01), Vaartstra et al.
patent: 5939787 (1999-08-01), Lee
patent: 5972179 (1999-10-01), Chittipeddi et al.
patent: 6077571 (2000-06-01), Kaloyeros et al.
patent: 6271137 (2001-08-01), Liou et al.
patent: 6420260 (2002-07-01), Ngan et al.
patent: 2006/0194434 (2006-08-01), Lai et al.
Fiordalice, R. W., et al., “Orientation Control of Chemical Vapor Deposition TiN Film for Barrier Applications”,Journal of the Electrochemical Society, 143(6), (Jun. 1996),pp. 2059-2063.
Lee, H. , et al., “Study of Diffusion Barrier Perfomance in MOCVD TiN by Transmission Electron Microscopy”,Materials Research Society Symposium Proceedings, 391, (1995),pp. 205-209.
Pramanik, D. , et al., “Effect of Underlayer on Sputtered Aluminum Grain Structure and its Correlation with Step Coverage in Submicron Vias”,1990 Proceedings Seventh International IEEE VLSI Multilevel Interconnection Conference, IEEE Catolog No. 90TH0325-1,(Jun. 1990),pp. 332-334.

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