Method for manufacturing a microlens

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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Details

C438S724000, C438S733000, C438S736000

Reexamination Certificate

active

11163278

ABSTRACT:
A method for manufacturing a microlens formed on a semiconductor substrate includes the steps of preparing the semiconductor substrate, forming an insulating film, which has high etching selectivity with the semiconductor substrate, on the semiconductor substrate, forming a first resist layer, which has an opening that exposes a part of the insulating film, on the insulating film, forming a lens forming portion by eliminating a part of the insulting film, using the first resist layer as a mask, forming a second resist layer, which has roughly cylindrical shape, on the lens forming portion surrounded by the insulating film, transforming the second resist layer into a third resist layer that has roughly hemispheric shape by reflowing the second resist later with a heat treatment, and forming a lens on the semiconductor substrate by etching the third resist layer, the semiconductor substrate, and the insulating film simultaneously with anisotropic etching.

REFERENCES:
patent: 2004/0146807 (2004-07-01), Lee et al.
patent: 2004/0185588 (2004-09-01), Fukuyoshi et al.
patent: 2004/0238908 (2004-12-01), Hashimoto
patent: 2005/0200960 (2005-09-01), Tang
patent: 2005/0274968 (2005-12-01), Kuo et al.
patent: 2006/0067606 (2006-03-01), Towle et al.
patent: H05-136460 (1993-06-01), None
patent: H06-104480 (1994-04-01), None

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