Controlled substrate voltage for memory switches

Details Controlled substrate voltage for memory switches Controlled substrate voltage for memory switches

2007-01-30

2007-01-30

Lam, David (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S230060, C365S148000

Reexamination Certificate

active

10652266

ABSTRACT:
Active control of body contacts in memory devices can provide variable substrate voltages during device operation. The body contacts can be used to adjust the body bias of switches in activated memory cells, while maintaining the body bias of switches in inactive memory cells. This can reduce the body effect (i.e., variation of the threshold voltage due to a variation of the substrate or bulk voltage) and can therefore provide improved array device performance (e.g., reduced data corruption) while the word line (“WL”) is activated.

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patent: 6563746 (2003-05-01), Fujioka et al.
patent: 0 568 818 (1993-11-01), None

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