Semiconductor device substrate with embedded capacitor

Details Semiconductor device substrate with embedded capacitor Semiconductor device substrate with embedded capacitor

2007-06-26

2007-06-26

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27090

Reexamination Certificate

active

10881372

ABSTRACT:
A method for forming a semiconductor device including a DRAM cell structure comprising a silicon on insulator (SOI) substrate with an embedded capacitor structure including providing a substrate comprising an overlying first electrically insulating layer; forming a first electrically conductive layer on the first electrically insulating layer to form a first electrode; forming a capacitor dielectric layer on the first electrode; forming a second electrically conductive layer on the capacitor dielectric layer to form a second electrode; forming a second electrically insulating layer on the second electrode; and, forming a monocrystalline silicon layer over the second electrode to form an SOI substrate comprising a first capacitor structure.

REFERENCES:
patent: 5776789 (1998-07-01), Nakamura
patent: 5959322 (1999-09-01), Lee
patent: 2002/0117704 (2002-08-01), Gonzalez
patent: 2002/0195639 (2002-12-01), Deboer et al.
patent: 2004/0082117 (2004-04-01), Kastner et al.
patent: 2004/0227172 (2004-11-01), Park

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