Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2007-06-26
2007-06-26
Mai, Anh Duy (Department: 2814)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S422000, C257S522000, C257SE21564, C257SE21573
Reexamination Certificate
active
11340594
ABSTRACT:
To change a plurality of trenches to one flat empty space by two-dimensionally forming the trenches on the surface of a semiconductor substrate and then applying heat treatment to the semiconductor substrate.
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Merriam-Webster's Collegiate Dictionary, 10thEdition 1997, definition of “PILLAR.”
Notification of Reasons for Rejection issued by the Japanese Patent Office, mailed Feb. 6, 2007, in Japanese Application No. 2000-252881 and English translation of Notification.
Matsuo Mie
Mizushima Ichiro
Sato Tsutomu
Takagi Shin-ichi
Tsunashima Yoshitaka
Duy Mai Anh
Kabushiki Kaisha Toshiba
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