Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2007-02-27
2007-02-27
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S593000, C438S586000, C257SE21590, C257SE21658
Reexamination Certificate
active
11033471
ABSTRACT:
The invention provides a method for fabricating contact-making connections, having the steps of: a) providing a substrate (101) with electronic circuit units (102a, 102b) arranged thereon, an intermediate layer (103) filling an interspace between the electronic circuit units (102a, 102b); an insulation layer (104) being deposited on the electronic circuit units (102a, 102b) and on the intermediate layer (103); a masking layer (105) being deposited on the insulation layer (104); and the masking layer (105) being patterned with a through-plating structure (106); b) patterning a contact-making region by means of the masking layer (105), a contact-making hole (112) being etched through the insulation layer (104) and the intermediate layer (103) as far as the substrate (101), a section of the substrate (101) being uncovered in accordance with the through-plating structure (106); c) filling the contact-making hole (112) with a through-plating material (108); d) polishing back the covering layer (107) deposited on the masking layer (105) as far as the masking layer (105); e) depositing a contact-making layer (109) on the masking layer (105) and the through-plating material, the contact-making layer (109) being electrically contact-connected with the through-plating material (108); and f) patterning the contact-making layer (109) together with the residual masking layer (105) in accordance with a structure of a contact-making layer mask (111) applied to the contact-making layer (109) in order to form interconnects as contact-making connections in a metallization plane (M).
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Krönke Matthias
Patzer Joachim
Infineon - Technologies AG
Lindsay Jr. Walter L.
Morrison & Foerster / LLP
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