Ferroelectric memory device

Details Ferroelectric memory device Ferroelectric memory device

2007-11-06

2007-11-06

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

26

Reexamination Certificate

active

11155032

ABSTRACT:
A ferroelectric memory device is characterized in having a first n-type MOS transistor having a gate connected to a word line, a ferroelectric capacitor having one end connected through the first n-type MOS transistor to a bit line, and another end connected to a plate line, and a plate line control circuit that drives the plate line, wherein the plate line control circuit includes an inverter having a first p-type MOS transistor and a second n-type MOS transistor, and an output terminal connected to the plate line, a voltage source that supplies a voltage to be supplied to a source of the first p-type MOS transistor, and a third n-type MOS transistor provided between the voltage source and the output terminal.

REFERENCES:
patent: 6097622 (2000-08-01), Shimizu et al.
patent: 6191971 (2001-02-01), Tanaka et al.
patent: 6490189 (2002-12-01), Kang et al.
patent: 6809954 (2004-10-01), Madan et al.
patent: 2003/0185041 (2003-10-01), Takahashi et al.
patent: 2003/0218898 (2003-11-01), Rickes et al.
patent: 2001-076493 (2001-03-01), None

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