Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-08
2007-05-08
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S030000, C438S099000
Reexamination Certificate
active
10803027
ABSTRACT:
A method of forming a thin film pattern by placing a functional liquid on a substrate, includes a bank formation step of forming banks in accordance with the thin film pattern on the substrate, a residue processing step of removing residue between the banks, and a material placement step of placing the functional liquid between the banks removed the residue.
REFERENCES:
patent: 5132248 (1992-07-01), Drummond et al.
patent: 7008809 (2006-03-01), Hasei
patent: 7015503 (2006-03-01), Seki et al.
patent: 2005/0191781 (2005-09-01), Hirai
patent: 2005/0221524 (2005-10-01), Hirai
patent: 2005/0245079 (2005-11-01), Honda et al.
patent: 2006/0033105 (2006-02-01), Fujii et al.
patent: 2006/0046336 (2006-03-01), Shoji et al.
patent: 2006/0115983 (2006-06-01), Fujii et al.
patent: 0 989 778 (2000-03-01), None
patent: 2001-0012686 (2001-02-01), None
Oliff & Berridge PLC.
Seiko Epson Corporation
Wilczewski M.
LandOfFree
Method of forming thin film pattern, method of manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming thin film pattern, method of manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming thin film pattern, method of manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3814285