Solid state imaging device and method of manufacturing the same

Details Solid state imaging device and method of manufacturing the same Solid state imaging device and method of manufacturing the same

2007-06-19

2007-06-19

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S757000

Reexamination Certificate

active

11159367

ABSTRACT:
A solid-state imaging device including a photoelectric conversion portion and a charge transfer portion equipped with charge transfer electrodes to transfer the charge generated in the photoelectric conversion portion, wherein the charge transfer portion is provided with a charge transfer electrodes having a first electrode including a first layer electric conductive film, and a second electrode having a second layer electric conductive film provided contiguously to the first electrode with an electrode insulating film therebetween, and the first electrode is coated with a silicon oxide film that is the electrode insulating film formed by side wall oxidation in the state that the upside is coated with an antioxidizing film so as to coat the side wall.

REFERENCES:
patent: 5817562 (1998-10-01), Chang et al.
patent: 6656840 (2003-12-01), Rajagopalan et al.
patent: 2005/0274995 (2005-12-01), Park
patent: 8-274302 (1996-10-01), None

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