Semiconductor device and fabricating method thereof

Details Semiconductor device and fabricating method thereof Semiconductor device and fabricating method thereof

2007-01-30

2007-01-30

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S303000, C438S254000

Reexamination Certificate

active

11026171

ABSTRACT:
The present invention provides a semiconductor device and fabricating method thereof, by which capacitance is enhanced by increasing an effective area of a lower electrode of a capacitor. The present invention includes a first lower electrode on a semiconductor substrate to have a plate shape, a second lower electrode on the first electrode to have atype (or “wing”-type) cross-section, a dielectric layer covering surfaces of the first and second lower electrodes, and an upper electrode on the dielectric layer.

REFERENCES:
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patent: 6249054 (2001-06-01), Tanigawa
patent: 6387775 (2002-05-01), Jang et al.
patent: 6410381 (2002-06-01), Kim et al.
patent: 6528366 (2003-03-01), Tu et al.
patent: 6559493 (2003-05-01), Lee et al.
patent: 6794702 (2004-09-01), Park
patent: 6825521 (2004-11-01), Komuro

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