Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Ii-vi compound
Reexamination Certificate
2007-02-06
2007-02-06
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Ii-vi compound
C257S103000, C257S087000
Reexamination Certificate
active
10367275
ABSTRACT:
Semiconductor devices formed by depositing III-nitride compounds on lithium niobate and/or lithium tantalate substrates are disclosed. Also disclosed, are semiconductor devices formed by depositing lithium niobate and/or lithium tantalate on III-Nitrides and Silicon Carbide substrates. The semiconductor devices provide good lattice matching characteristics between the substrate and the material that is deposited upon the substrate. The method of forming such semiconductor devices, which is also disclosed, enables fabrication of periodically-poled devices in a manner that is advantageous in comparison to existing technologies.
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W. Alan Doolittle et al., “III-Nitride Growth on Lithium Niobate”, MRS symposium Processing 2002.
W. Alan Doolittle, Gon Namkoong, Alexander Carver, Walter Henderson, Dieter Jundt, April S. Brown, “III-Nitride Growth on Lithium Niobate: A New Substrate Material for Polarity Engineering in III-Nitride Heteroepitaxy,” MRS Symposium Proceedings, Boston 2002, pp. 1-6.
Georgia Tech Research Corporation
Nguyen Cuong
Thomas Kayden Horstemeyer & Risley LLP
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