Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-08
2007-05-08
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S338000, C257S343000, C257S314000, C438S107000, C438S133000
Reexamination Certificate
active
10924089
ABSTRACT:
An integrated circuit formed on a semiconductor substrate and configured to accommodate higher voltage devices and low voltage devices therein. In one embodiment, the integrated circuit includes a transistor having a gate located over a channel region recessed into a semiconductor substrate, and a source/drain including a lightly doped region located adjacent the channel region and a heavily doped region located adjacent the lightly doped region. The transistor also includes an oppositely doped well located under and within the channel region. The transistor still further includes a doped region, located between the heavily doped region and the oppositely doped well, having a doping concentration profile less than a doping concentration profile of the heavily doped region. The integrated circuit also includes a driver switch of a driver formed on the semiconductor substrate.
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Lotfi Ashraf W.
Tan Jian
Enpirion, Inc.
Rao Shrinivas H.
Slater & Matsil L.L.P.
Weiss Howard
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