Semiconductor device with source and drain regions

Details Semiconductor device with source and drain regions Semiconductor device with source and drain regions

2007-01-09

2007-01-09

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S343000, C257S389000, C257S408000, C257SE29261, C257SE29268

Reexamination Certificate

active

10738002

ABSTRACT:
A semiconductor device is provided with a gate electrode formed over a substrate that has gate oxide films disposed thereon. Source-drain regions of low and high concentration are formed next to the gate electrode. A diffusion region width of the source side of the source-drain regions is smaller than at least a diffusion region width of the drain side.

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