Semiconductor device comprising a plurality of semiconductor...

Details Semiconductor device comprising a plurality of semiconductor... Semiconductor device comprising a plurality of semiconductor...

2007-07-24

2007-07-24

Clark, Jasmine (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S759000, C257S760000, C257S734000, C257S736000, C257SE23019, C257SE23041, C257SE23145, C257SE21627, C257SE21641

Reexamination Certificate

active

11524481

ABSTRACT:
A semiconductor device includes a first semiconductor construct provided on a base plate and having a semiconductor substrate and external connection electrodes. An insulating layer is provided on the base plate around the first semiconductor construct. An upper layer insulating film is provided on the first semiconductor construct and insulating layer. Upper layer wiring lines are provided on the upper layer insulating film so that the upper layer wiring line is electrically connected to the external connection electrode. A second semiconductor construct is joined to and installed on connection pad portions. All jointing portions of the second semiconductor construct for the connection pad portions of the upper layer wiring lines are disposed in a region corresponding to the first semiconductor construct.

REFERENCES:
patent: 6882054 (2005-04-01), Jobetto
patent: 7030494 (2006-04-01), Aoki
patent: 7064440 (2006-06-01), Jobetto et al.
patent: 7075181 (2006-07-01), Wakabayashi et al.
patent: 7183639 (2007-02-01), Mihara et al.
patent: 2004/0262716 (2004-12-01), Aoki
patent: 2005/0098891 (2005-05-01), Wakabayashi et al.
patent: 2005/0200018 (2005-09-01), Wakisaka et al.
patent: 2005/0269698 (2005-12-01), Okada et al.
patent: 2005-142466 (2005-06-01), None

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