Transistor having an asymmetric source/drain and halo...

Details Transistor having an asymmetric source/drain and halo... Transistor having an asymmetric source/drain and halo...

2007-04-24

2007-04-24

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S549000

Reexamination Certificate

active

11122740

ABSTRACT:
By providing an asymmetric design of a halo region and extension regions of a field effect transistor, the transistor performance may significantly be enhanced for a given basic transistor architecture. In particular, a large overlap area may be created at the source side with a steep concentration gradient of the PN junction due to the provision of the halo region, whereas the drain overlap may be significantly reduced or may even completely be avoided, wherein a moderately reduced concentration gradient may further enhance the transistor performance.

REFERENCES:
patent: 5500379 (1996-03-01), Odake et al.
patent: 6255174 (2001-07-01), Yu
patent: 6593623 (2003-07-01), Sultan
patent: 6833307 (2004-12-01), Wristers et al.
patent: 2004/0087094 (2004-05-01), Wristers et al.
patent: 102 61 307 (2004-07-01), None
patent: WO 2004/040655 (2004-05-01), None

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