Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-09-11

2007-09-11

Luu, Chuong A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S303000, C257S310000

Reexamination Certificate

active

10941950

ABSTRACT:
The present invention provides a method of increasing designing freedom of a position to form a capacitor, and increasing a capacitance value thereof. When forming a first contact, a tungsten plug for increasing a surface area of a lower electrode is formed in a contact interlayer film at a region where the capacitor is to be formed. Since the tungsten plug does not have to be formed right above the capacitor contact, a position to form the capacitor is not limited by a position where the capacitor contact is provided.

REFERENCES:
patent: 6281535 (2001-08-01), Ma et al.
patent: 6406968 (2002-06-01), Chien et al.
patent: 2001-015705 (2001-01-01), None

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