Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-07-31
2007-07-31
Norton, Nadine (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S689000, C438S725000, C430S299000, C716S030000
Reexamination Certificate
active
11177145
ABSTRACT:
A method for determining the anti-reflective coating (or bottom anti-reflective coating) over-etch time adjust with real-time process feedback is presented. The critical dimension CDresistof the patterned photoresist is measured and a first wafer with median values chosen (101) from a lot. A first time t* is found (102) and used to form the desired structure. Using the measured critical dimension of the formed structure on the first wafer a second time tlotis found (104). Finally, an over-etch time t(x) is found and used to etch the remaining wafers in the lot (106).
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Baum Christopher C.
Friedmann James B.
Brady III W. James
George Patricia A.
McLarty Peter K.
Norton Nadine
Telecky , Jr. Frederick J.
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