Method of bonding semiconductor devices

Details Method of bonding semiconductor devices Method of bonding semiconductor devices

2007-03-06

2007-03-06

Thai, Luan (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S613000, C438S615000, C257S780000, C257S781000, C257SE23021

Reexamination Certificate

active

10631508

ABSTRACT:
A method of bonding semiconductor devices is disclosed. The method comprises providing a first substrate having a first conductive interconnecting structure formed thereon and a second substrate having a second conductive interconnecting structure formed thereon. A first conductive passivation layer is selectively formed over exposed areas of the first conductive interconnecting structure. A second conductive passivation layer is selectively formed over exposed areas of the second conductive interconnecting structure. The first substrate and the second substrate are bonded together in such a way that the first conductive passivation layer bonds to the second conductive passivation layer to create a passivation-passivation interface.

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