Nonvolatile memory system using magneto-resistive random...

Details Nonvolatile memory system using magneto-resistive random... Nonvolatile memory system using magneto-resistive random...

2007-07-17

2007-07-17

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S185010

Reexamination Certificate

active

11130351

ABSTRACT:
A non-volatile memory system (230) includes a magnetoresistive random access memory (MRAM) (232) including a plurality of magnetoresistive memory cells, a floating-gate nonvolatile memory (234) including a plurality of floating-gate memory cells, and a controller (236) coupled to the MRAM (232) and to the floating-gate nonvolatile memory (234). The controller (236) is adapted to be coupled to a system bus (220) and controls a selected one of the MRAM (232) and the floating-gate nonvolatile memory (234) in response to an access initiated from the system bus (220).

REFERENCES:
patent: 5604881 (1997-02-01), Thomas
patent: 5701516 (1997-12-01), Cheng et al.
patent: 6567307 (2003-05-01), Estakhri
patent: 6691205 (2004-02-01), Zilberman
patent: 6707748 (2004-03-01), Lin et al.
patent: 6728845 (2004-04-01), Adiletta et al.
patent: 2005/0010712 (2005-01-01), Kim et al.
patent: 2005/0068802 (2005-03-01), Tanaka
“256K×16-Bit 3.3-V Asynchronous Magnetoresistive RAM,” Freescale Semiconductor, Inc., Advance Information, MR2A16A/D; Rev. 0.1, Jul. 2004.
“MRAM,” Freescale Semiconductor, Inc., Process Technology, Rev. 4, 2004.
“A low power 1Mbit MRAM based on 1T1MTJ bit cell integrated with Copper Interconnects,” M. Durlam et al., Motorola Labs and Motorola Semiconductor Products Sector, VLSI Symposium, 2002.

Affiliated with

Also associated with

Rating

Nonvolatile memory system using magneto-resistive random... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory system using magneto-resistive random..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory system using magneto-resistive random... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3798950