Image sensors and methods of manufacturing the same

Details Image sensors and methods of manufacturing the same Image sensors and methods of manufacturing the same

2007-05-29

2007-05-29

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S184000, C257S187000, C257S192000, C257S293000, C257S461000, C257S509000

Reexamination Certificate

active

10744189

ABSTRACT:
Image sensors and methods of manufacturing an image sensor are disclosed. A disclosed photo diode may receive short wavelength light in its depletion region without exhibiting defective phenomenon such as noise and dark current. In the illustrated example, this performance is achieved by forming a trench type light-transmission layer to occupy a major surface of the photo diode so as to reduce the area available for defects on the surface of the semiconductor substrate. As a result of this reduction, the depletion region formed upon the operation of the sensor may extend toward the surface of the semiconductor substrate without concern for defects. The image sensor may be manufactured without forming a blocking layer in connection with a silicide layer.

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