Embedded capacitor with interdigitated structure

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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Details

C257S499000, C257S528000, C257SE29001

Reexamination Certificate

active

11224224

ABSTRACT:
An embedded capacitors with interdigitated structure for a package carrier or a printed circuit board comprises a plurality of stacked conductive layers, at least one first via connecting structure and at least one second via connecting structure. In order to enhance the capacitance and the layout efficiency, this case fully utilizes the spaces between the via connecting structures for disposing at least one extending line extended from the via connecting structure to simultaneously increase side-to-side and layer-to-layer capacitances. Thus, the present invention provides a capacitance larger than that of conventional design.

REFERENCES:
patent: 5583359 (1996-12-01), Ng et al.
patent: 6635916 (2003-10-01), Aton

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