Semiconductor devices having double-sided hemispherical...

Details Semiconductor devices having double-sided hemispherical... Semiconductor devices having double-sided hemispherical...

2007-05-08

2007-05-08

Owens, Douglas W. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S307000, C257S308000

Reexamination Certificate

active

10897826

ABSTRACT:
Semiconductor devices are provided with double-sided hemispherical silicon grain (HSG) electrodes for container capacitors. In an embodiment, container capacitors for a semiconductor device have a cup-shaped bottom electrode with an interior surface including HSG polysilicon and an exterior surface including smooth polysilicon. A barrier layer may be formed within the container that defines the container capacitor.

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