High dynamic range image sensor cell

Details High dynamic range image sensor cell High dynamic range image sensor cell

2007-07-10

2007-07-10

Pham, Hoai (Department: 2814)

Television

Camera, system and detail

Solid-state image sensor

C257S184000

Reexamination Certificate

active

10980639

ABSTRACT:
An image sensor cell includes a first MOS transistor coupled to an operating voltage for providing an output voltage of the image sensor cell with the output voltage changing conformingly with a voltage on a gate of the first MOS transistor. A photodiode is coupled to a floating node which further controls the voltage of the gate of the first MOS transistor. A photoconductor is coupled between the operating voltage and the floating node. The photoconductor has its resistance varying in response to a magnitude change of an imposed illumination so that the floating node is provided with additional electrical charges conformingly through the photoconductor while the photodiode drains electrical charges, thereby decreasing a voltage reduction rate of the voltage on the gate of the first MOS transistor.

REFERENCES:
patent: 4407010 (1983-09-01), Baji et al.
patent: 4709252 (1987-11-01), Jhabvala et al.
patent: 6255638 (2001-07-01), Eraluoto et al.
patent: 6316760 (2001-11-01), Koyama
patent: 2003/0213915 (2003-11-01), Chao et al.
patent: 2005/0083421 (2005-04-01), Berezin et al.
Bo-Rong Lin., A High Dynamic Range of CMOS Image Sensor Design Based on Two-Frame Composition, SOC Conference, 2003, Proceedings, IEEE Int'l [Systems-on Chip], pp. 389-392, Taiwan, ROC.

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