Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2007-03-06
2007-03-06
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S185180, C365S226000, C327S548000
Reexamination Certificate
active
10862404
ABSTRACT:
A replenish circuit for a semiconductor memory device, including a bias current generating unit adapted to generate a bias current, a frequency controllable oscillator adapted to receive the bias current and to provide an oscillating output, and a pulse generator adapted to receive the oscillating output and to generate first and second pulses as a function of the oscillating output, the second pulse being embedded in the first pulse, the first pulse causing the bias current generating unit to be connected to a power supply, and the second pulse being fed to sample-and-hold circuitry adapted to sample the bias current and hold the value thereof during the first pulse.
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Betser Yoram
Elyada Ori
Sofer Yair
Eitan Law Group
Hoang Huan
Saifun Semiconductors Ltd.
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