Method for operating a memory device having an amorphous...

Details Method for operating a memory device having an amorphous... Method for operating a memory device having an amorphous...

2007-03-27

2007-03-27

Nguyen, Viet Q. (Department: 2818)

Static information storage and retrieval

Floating gate

Particular connection

C365S185290, C365S185010, C257S077000, C257S316000

Reexamination Certificate

active

09135413

ABSTRACT:
A floating gate transistor has a reduced barrier energy at an interface with an adjacent amorphous silicon carbide (a-SiC) gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored as charge on the floating gate. The data charge retention time on the floating gate is reduced. The data stored on the floating gate is dynamically refreshed. The floating gate transistor provides a dense and planar dynamic electrically alterable and programmable read only memory (DEAPROM) cell adapted for uses such as for a dynamic random access memory (DRAM) or a dynamically refreshed flash EEPROM memory. The floating gate transistor provides a high gain memory cell and low voltage operation.

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