Photo mask, method of manufacturing photo mask, and method...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000

Reexamination Certificate

active

10864375

ABSTRACT:
A photo mask includes a mask pattern formed by using a mask exposure pattern to exposure a mask substrate, the mask exposure pattern being formed by adding a proximity effect correction pattern to a design pattern that is a pattern image of design data, the design pattern having a first portion extending in a first direction and a second portion extending in a second direction that is oblique to the first direction, the correction pattern having a first correction portion added to the first portion and a second correction portion added to the second portion, and an edge portion of the second correction portion being shaped to incline to extend in the first direction or a direction orthogonal to the first direction.

REFERENCES:
patent: 6171731 (2001-01-01), Medvedeva et al.
patent: 6553562 (2003-04-01), Capodieci et al.
patent: 6601231 (2003-07-01), LaCour
patent: 6670081 (2003-12-01), Laidig et al.
patent: 6686108 (2004-02-01), Inoue et al.
patent: 2002-083757 (2002-03-01), None
patent: 2002-329783 (2002-11-01), None

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